STP30NE06 |
RFQ for STP30NE06 |
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| Product | Manufacturers | Pack | D/C |
| STP30NE06 | - | TO-220 | 04+ |
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
Typical Application |
Features |
| DC MOTOR CONTROLDC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATION | TYPICAL RDS(on) = 0.042 AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATIONORIENTED CHARACTERIZATION |
| Symbol | Parameter | Value | Unit | |
| STP30NE06 | STP30NE06FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 60 | V | |
| VGS | Gate- source Voltage | ±20 | V | |
| ID | Drain Current (continuos) at TC = 25 |
30 |
17 | A |
| ID | Drain Current (continuos) at TC = 100 | 21 | 12 | A |
| IDM() | Drain Current (pulsed) | 120 | 68 | A |
| PTOT | Total Dissipation at TC = 25 | 80 | 30 | W |
| Derating Factor | 0.53 | 0.2 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
| dV/dt | Peak Diode Reco
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